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| data sheet 1 v1.1, 2007-09-25 smart high-side power switch bts723gw ? ? !" product summary package ! ? "! ? ! #$ % & ' () *( +$ ! % &,+ # $ % ? ',-./ $!0 $ # #+',! $ # # # 10! 2 # ,! ,%3', ? 2 ? 3 # !### $ ? 2 # # #$ 4 ! &%% ? 5+! # # # 1 ( #(* # !" $ ## # ? 2 0 #$ # # ? ' $ #$ # ? ! 2 0$ ## $ ' ? +',! $ ? %! # ! ! 2.'+ ? - #! 6 #$ # ? , $ $ # ? 7 # ? & $ # # # ! # $ # ? ! 6# $ 2 ? , $ ? # ? +$ ! ? / ! $ # ? $# ##$! 4 ? 2 4 ? & $ # # ? . # .,8 $ ? 8 # 1 # $ $ # # $$ ? ## -- ? -# 1 ! $ # ? 8 # 1 1 2 $ block diagram p-dso-14 & + % ,/ % ( ,/( 9 8 & # & #( () * :/ :/( & + ( , $ $ $ pg-dso14 data sheet 2 v1.1, 2007-09-25 smart high-side power switch bts723gw ! " " # ! % () * ? & # !; :/ +, & #9 8 - - :/( .+ & #9 8 ,3:;3 4 3$: / ,/( ! & 9 8 , ,/ 0 % ( $ +1+ 2+! <(1 ? <(1 ? < ? <(1 ? < ? data sheet 3 v1.1, 2007-09-25 smart high-side power switch bts723gw pin definitions and functions pin symbol function 1,7, 8,14, v bb positive power supply voltage . design the wiring for the simultaneous max. short circuit currents from channel 1 to 2 and also for low thermal resistance 2 in1 6 in2 input 1,2 activates channel 1,2 in case of logic high signal 12,13 out1 9,10 out2 output 1,2 protected high-side power output of channel 1,2. design the wiring for the max. short circuit current; both outputpins have to be connected in parallel for operation according this spec. 3 st1 5 st2 diagnostic feedback 1,2 of channel 1,2 open drain 4 gnd logic ground 11 spu connection for external pull up voltage source for the open drain status output. pull up resistors are integrated. pin configuration (top view) v bb 1 ? 14 v bb in1 2 13 out1 st1 3 12 out1 gnd 4 11 spu st2 5 10 out2 in2 6 9 out2 v bb 7 8 v bb data sheet 4 v1.1, 2007-09-25 smart high-side power switch bts723gw p arameter symbol values unit s upply voltage (overvoltage protection see page 6) v bb 58 v s upply voltage for full short circuit protection t j,start = -40 ...+150c v bb 50 v o utput voltage to v bb v on 70 v n egative voltage slope at output -d v out /d t 20 v/s l oad current (short-circuit current, see page 7) i l i l(lim) 1 ) a l oad dump protection 2 ) v loaddump = v a + v s , v a = 27 v r i 3 ) = 8 ? , t d = 200 ms; in = low or high, each channel loaded with r l =20 ? , v load dump 4 ) 70 v o perating temperature range s torage temperature range t j t stg -40 ...+150 -55 ...+150 c power dissipation (dc) 5) t a = 25c: (all channels active) t a = 85c: p tot 3.0 1.6 w m aximal switchable inductance, single pulse v bb = 12v, t j,start = 150c 5) , i l = 2.5 a, e as = 110 mj, 0 ? one channel: i l = 3.5 a, e as = 278 mj, 0 ? two parallel channels: s ee diagrams on page 12 z l 23.0 30.0 mh electrostatic discharge capability (esd): ( human body model) acc. mil-std883d, method 3015.7 and esd a ssn. std. s5.1-1993 r=1.5k ? ; c=100pf v esd 1.0 kv input voltage (dc) v in 42 v c urrent through input pin (dc) c urrent through status pin (dc) i in i st 2.0 2.0 ma s tatus pull up voltage v spu 42 v 1 ) current limit is a protection function. operation in current limitation is considered as "outside" normal operating range. protection functions are not designed for continuous repetitive operation. 2 ) supply voltages higher than v bb(az) require an external current limit for the gnd and status pins (a 150 ? resistor for the gnd connection is recommended. 3 ) r i = internal resistance of the load dump test pulse generator 4 ) v load dump is setup without the dut connected to the generator per iso 7637-1 and din 40839 5 ) device on 50mm*50mm*1.5mm epoxy pcb fr4 with 6cm 2 (one layer, 70 m thick) copper area for v bb connection. pcb is vertical without blown air. see page 15 data sheet 5 v1.1, 2007-09-25 smart high-side power switch bts723gw parameter and conditions symbol values unit min typ max thermal resistance junction - soldering point 5),6) each channel: r thjs -- -- 25 k/w junction - ambient 5) one channel active: all channels active: r thja -- -- 45 41 -- -- 6 ) soldering point: upper side of solder edge of device pin 15. see page 15 electrical characteristics parameter and conditions, each of the two channels symbol values unit at t j = -40...+150c, v bb = 24 v unless otherwise specified min typ max load switching capabilities and characteristics on-state resistance (v bb to out); i l = 2 a, v bb 7v each channel, t j = 25c: t j = 150c: two parallel channels, t j = 25c: see diagram, page 12 r on -- -- -- 90 170 45 105 210 53 m ? data sheet 6 v1.1, 2007-09-25 smart high-side power switch bts723gw parameter and conditions, each of the two channels symbol values unit at t j = -40...+150c, v bb = 24 v unless otherwise specified min typ max nominal load current one channel active: two parallel channels active: device on pcb 7 ) , t a = 85c, t j 150c i l(nom) 2.5 4.0 2.9 4.2 -- -- a output current while gnd disconnected or pulled up 8 ) ; v bb = 30 v, v in = 0, see diagram page 11 i l(gndhigh) -- -- 1.0 ma turn-on time 9 ) in to 90% v out : turn-off time in to 10% v out : r l =12 ? t on t off -- -- -- -- 55 95 s slew rate on 9 ) 10 to 30% v out , r l =12 ? : d v /d t on 1.0 -- 5 v/ s slew rate off 9 ) 70 to 40% v out , r l =12 ? : -d v /d t off 1.0 -- 5 v/ s operating parameters operating voltage v bb(on) 7.0 -- 58 v undervoltage restart of charge pump t j =-40...+25c: t j =+150c: v bb(ucp) -- -- 4 -- 5.5 7.0 v overvoltage protection 10 ) i bb = 40 ma v bb(az) 58.5 63 69 v standby current 11 ) t j =-40c...+25c : t j =+125c 12 ) : v in =0; see diagram page 10 t j =+150c: i bb(off) -- -- -- 13 25 23 23 35 a off-state output current (included in i bb(off) ) v in = 0; each channel i l(off) -- 3 -- a operating current 13) , v in = 5v, one channel on: all channels on: i gnd -- -- 1.0 2.0 1.5 3.0 ma 7 ) device on 50mm*50mm*1.5mm epoxy pcb fr4 with 6cm 2 (one layer, 70 m thick) copper area for v bb connection. pcb is vertical without blown air. see page 15 8 ) not subject to production test, specified by design 9 ) see timing diagram on page 13. 10 ) supply voltages higher than v bb(az) require an external current limit for the gnd; a 150 ? resistor is recommended. see also v on(cl) in table of protection functions and circuit diagram on page 10. 11 ) measured with load; for the whole device; all channels off 12 ) not subject to production test, specified by design 13 ) add i st , if i st > 0 data sheet 7 v1.1, 2007-09-25 smart high-side power switch bts723gw parameter and conditions, each of the two channels symbol values unit at t j = -40...+150c, v bb = 24 v unless otherwise specified min typ max protection functions 14) current limit, (see timing diagrams, page 13) t j =-40c: t j =25c: t j =+150c: i l(lim) -- -- 5 10 9 8 12 -- -- a repetitive short circuit current limit 15 ) , t j = t jt each channel two parallel channels (see timing diagrams, page 13) i l(scr) -- -- 8 8 -- -- a initial short circ uit shutdown time t j,start =25c: (see timing diagrams on page 13) t off(sc) -- 2 -- ms output clamp (inductive load switch off) 16) at v on(cl) = v bb - v out , i l = 1 a v on(cl) 59 64 70 v thermal overload trip temperature t jt 150 -- -- c thermal hysteresis ? t jt -- 10 -- k reverse battery reverse battery voltage 17 ) - v bb -- -- 24 v drain-source diode voltage (v out > v bb ) 18 ) i l = - 3.0 a, t j = +150c - v on -- 650 -- mv inverse current 19 ) gnd current in case of 3a inverse current 20 ) i gnd(inv cur) -- -- 15 ma 14 ) integrated protection functions are designed to prevent ic destruction under fault conditions described in the data sheet. fault conditions are considered as "outside" normal operating range. protection functions are not designed for continuous repetitive operation. 15 ) not subject to production test, specified by design 16 ) if channels are connected in parallel, output clamp is usually accomplished by the channel with the lowest v on(cl) 17 ) requires a 150 ? resistor in gnd connection. the reverse load current through the intrinsic drain-source diode has to be limited by the connected load. power dissipation is higher compared to normal operating conditions due to the voltage drop across the drain-source diode. the temperature protection is not active during reverse current operation! input and status currents have to be limited (see max. ratings page 4 and circuit page 10). 18 ) not subject to production test, specified by design 19 ) not subject to production test, specified by design 20 ) in case of an inverse current of 3a the both status outputs must not be disturbed. the neighbour channel can be switched normally; not all paramters lay within the range of the spec please note, that in case of an inverse current no protection function is active. the power dissipation is hi g her com p ared to normal o p eration in forward mode due to the volta g e dro p across the drain-source diode data sheet 8 v1.1, 2007-09-25 smart high-side power switch bts723gw parameter and conditions, each of the two channels symbol values unit at t j = -40...+150c, v bb = 24 v unless otherwise specified min typ max diagnostic characteristics open load detection current 21 ) i l(off) -- 3 -- a open load detection voltage v out(ol) 2.0 2.85 3.7 v short circuit detection voltage 22 ) v bb (pin 1,7,8,14) to out1 (pin 12,13) resp. v bb (pin 1,7,8,14) to out2 ( pin 9,10) v on(sc) -- 4.0 -- v input and status feedback 23 ) integrated resistors; t j =25c: input (see circuit page 2) status status pull up r i r st r pull up -- 0.53 -- 20 0.85 12 -- 1.2 -- k ? k ? k ? input turn-on threshold voltage v in(t+) 1.2 -- 2.2 v input turn-off threshold voltage v in(t-) 1.0 -- -- v input threshold hysteresis ? v in(t) -- 0.25 -- v off state input current v in = 0.4 v: i in(off) 1 -- 15 a on state input current v in = 5 v: i in(on) 10 25 50 a status output (open drain) zener limit voltage status low voltage v spu = 5v: v st(high) v st(low) 5.4 -- 6.1 -- -- 0.4 v 21 ) not subject to production test, specified by design 22 ) not subject to production test, specified by design 23 ) if a ground resistor r gnd is used, add the voltage drop across these resistors. data sheet 9 v1.1, 2007-09-25 smart high-side power switch bts723gw truth table channel 1 input 1 output 1 status 1 channel 2 input 2 output 2 status 2 level level bts 723 normal operation l h l h l h open load l h v out > 2.7v h h h short circuit to gnd l h l l l l short circuit to v bb l h h h h h overtem- perature l h l l l l parallel switching of channel 1 and 2 is easily possible by connecting the inputs and outputs in parallel. in this mode it is recommended to use only one status. terms () * % ,/ :/ 9 8 ,/ % % % % & :/ % 9 8 * ( " & # ! (0" % % ,/ 9 8 + () * % ( ,/( :/( 9 8 ,/( % ( % % ( % &( :/( ( = & # ! )0 % ,/( + ( leadframe (v bb ) is connected to pin 1,7,8,14 external r gnd optional; a single resistor r gnd = 150 ? for reverse battery protection up to the max. operating voltage. data sheet 10 v1.1, 2007-09-25 smart high-side power switch bts723gw input circuit (esd protection), in1 or in2 % 9 8 % .,8 >8 % % % the use of esd zener diodes as voltage clamp at dc conditions is not recommended. status output, st1 or st2 ,/ 9 8 .,8 >8 , $ 3$: ,/ % % & esd-zener diode: 6.1 v typ., r st(on) < 250 ? , r st = 850 ? typ. , r pull up =12k ? typ. the use of esd zener diodes as voltage clamp at dc conditions is not recommended short circuit detection fault signal at st-pin: v on > 4.0 v typ, no switch off by the profet itself, external switch off recommended! & $ ? :/ inductive and overvoltage output clamp, out1 or out2 ? :/ > 3 9 8 v on clamped to v on(cl) = 64 v typ. overvolt. and reverse batt. protection ? % ,/ ,/ 9 8 9 8 , 9 8 - 3 -./ >( % > & #9 8 & # :/ , $ $$$ , $ $$ v z1 = 6.1 v typ., v z2 = 63 v typ., r gnd = 150 ? , r i = 850 ? 2 , r st =20k ? typ. , r pull up =12k ? typ in case of reverse battery the load current has to be limited by the load. temperature protection is not active data sheet 11 v1.1, 2007-09-25 smart high-side power switch bts723gw open-load detection, out1 or out2 off-state diagnostic condition: open load, if v out > 2.7 v typ. (in low) i l(ol) typ. 2a an external resitor can be used to increase the open load detection current )% & $ , 9 8 % && -- :/ gnd disconnect () * % ,/ :/ 9 8 % ,/ 9 8 any kind of load. due to v gnd > 0, no v st = low signal available. gnd disconnect with gnd pull up () * % ,/ :/ 9 8 9 8 % ,/ any kind of load. if v gnd > v in - v in(t+) device stays off due to v gnd > 0, no v st = low signal available. v bb disconnect with energized inductive load () * % ,/ :/ 9 8 for inductive load currents up to the limits defined by z l (max. ratings and diagram on page 12) each switch is protected against loss of v bb . consider at your pcb layout that in the case of vbb dis- connection with energized inductive load all the load current flows through the gnd connection. data sheet 12 v1.1, 2007-09-25 smart high-side power switch bts723gw inductive load switch-off energy dissipation () * % ,/ :/ 9 8 3 . . . . , & . & # & & & > energy stored in load inductance: e l = 1 / 2 l i 2 l while demagnetizing load inductance, the energy dissipated in profet is e as = e bb + e l - e r = v on(cl) i l (t) dt, with an approximate solution for r l > 0 ? : e as = i l l 2 r l ( v bb +|v out(cl) |) (1+ i l r l |v out(cl) | ) maximum allowable load inductance for a single switch off (one channel) 5) t j,start = 150c, v bb = 12 v, r l =0 ? z l [mh] ("*= i l [a] typ. on-state resistance ; i l = 2 a, in = high r on [mohm] = ( * ") " * /@<a+ (a+ *a+ v bb [v] typ. standby current ; v bb = 9...34 v, in1,2,3,4 = low i bb(off) [ a] ( ( " " * * ( t j [c] data sheet 13 v1.1, 2007-09-25 smart high-side power switch bts723gw figure 1a: v bb turn on, : % :/ ,/ # #% in case of too early v in =high the device may not turn on (curve a) t d(bb in) approx. 150 s figure 2a: switching a resistive load, turn-on/off time and slew rate definition: % :/ % & on off )b #c# #c# b figure 2b: switching an inductive load % ,/ :/ & % figure 3a: short circuit: shut down by overtempertature, reset by cooling % ,/ & % &,+ % % & ! :/ $ $ 9 8 ! ,+ timing diagrams all channels are symmetric and consequently the diagrams are valid for channel 1 and channel 2 data sheet 14 v1.1, 2007-09-25 smart high-side power switch bts723gw figure 4a: overtemperature: reset if t j < t jt % ,/ :/ d / figure 5a: open load, : detection in off-state, open load occurs in off-state % ,/ :/ & % ! ! 45 45 :/& *) i l = 2 a typ. v out > 2.7v figure 6: overvoltage, no shutdown: % :/ bb ,/ on(cl) v out(ol) v data sheet 15 v1.1, 2007-09-25 smart high-side power switch bts723gw package outlines figure 1pg-dso-14-37 (plastic dual small outline package) (rohs-compliant) to meet the world-wide customer requirements for environmentally friendly products and to be compliant with government regulations the device is available as a green product. green products are rohs-compliant (i.e pb- free finish on leads and suitable for pb-fre e soldering according to ipc/jedec j-std-020). please specify the package needed (e.g. green package) when placing an order 1) does not include plastic or metal protrusion of 0.15 max. per side 2) lead width can be 0.61 max. in dambar area -0.2 8.75 1) 0.64 0.19 +0.06 index marking 1.27 +0.10 0.41 0.1 1 14 2) 7 14x 8 0.175 (1.47) 0.07 0.2 6 0.35 x 45? -0.2 1.75 max. 4 1) 0.25 8?max. -0.06 0.2 m ab m 0.2 c c b a gps01230 you can find all of our packages, so rts of packing and others in our infineon internet page ?products?: http://www.infineon.com/products . dimensions in mm data sheet 16 v1.1, 2007-09-25 smart high-side power switch bts723gw revision history version date changes v1.1 2007-09-25 modification of the package drawing v1.0 2007-05-25 creation of the green datasheet. first page : adding the green logo and the aec qualified adding the bullet aec qualified and the rohs compliant features package page : modification of the package to be green. edition 2007-09-25 published by infineon technologies ag 81726 munich, germany ? infineon technologies ag 9/25/07. all rights reserved. legal disclaimer the information given in this docu ment shall in no event be regarded as a guarantee of conditions or characteristics (?beschaffenheitsgarantie?). with respect to any examples or hints given herein, any typical values stated herein and/or any information regarding the app lication of the device, infi neon technologies hereby disclaims any and all warranties a nd liabilities of any kind, including without limitation warranties of non-infringement of intellectual property rights of any third party. information for further information on technology , delivery terms and conditions and prices please contact your nearest infineon technologies office ( www.infineon.com ). warnings due to technical requirements components may contain da ngerous substances. for information on the types in question please contact your nearest infineon technologies office. infineon technologies components may only be used in life-support devices or systems with the express written approval of infineon technologies, if a failure of such components can reasonably be expected to cause the failure of that life-support device or system, or to affect the safe ty or effectiveness of that device or system. life support devices or systems are intended to be implanted in the hu man body, or to support an d/or maintain and sustain and/or protect human life. if they fail, it is reasonable to assume that the health of the user or other persons may be endangered. |
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